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| Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes | |
| Lu LW; Zhang YH; Xu ZT; Xu ZY; Wang ZG; Wang J; Ge WK; Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China. | |
| 2000 | |
| Conference Name | 11th International Semiconducting and Insulating Materials Conference (SIMC-XI) |
| Source Publication | SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS |
| Pages | 341-344 |
| Conference Date | JUL 03-07, 2000 |
| Conference Place | CANBERRA, AUSTRALIA |
| Publication Place | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Publisher | IEEE |
| ISBN | 0-7803-5815-5 |
| metadata_83 | chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
| Abstract | nThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance. |
| Subject Area | 半导体物理 |
| Funding Organization | IEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc. |
| Indexed By | CPCI-S |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/14917 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China. |
| Recommended Citation GB/T 7714 | Lu LW,Zhang YH,Xu ZT,et al. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:341-344. |
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| File Name/Size | DocType | Version | Access | License | ||
| 2904.pdf（245KB） | 限制开放 | -- | Application Full Text | |||
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