SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
Lu LW; Zhang YH; Xu ZT; Xu ZY; Wang ZG; Wang J; Ge WK; Lu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
2000
Conference Name11th International Semiconducting and Insulating Materials Conference (SIMC-XI)
Source PublicationSIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS
Pages341-344
Conference DateJUL 03-07, 2000
Conference PlaceCANBERRA, AUSTRALIA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN0-7803-5815-5
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
AbstractnThermal processing of strained ln(0.2)Ga(0.8)As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It was found that rapid thermal annealing can improve the 77 K photoluminescence efficiency and electron emission from the active layer, due to removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of post-growth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.
Subject Area半导体物理
Funding OrganizationIEEE Electron Devices Soc.; Australian Natl Univ.; AIXTRON.; Oxford Instruments Plasma Technol.; Ledex Corp.; IEEE ACT Sect.; IEEE Electron Devices Soc, Australian Chapter.; Lasers & Electro-Opt Soc.; Australian Mat Res Soc.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/14917
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLu LW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Lu LW,Zhang YH,Xu ZT,et al. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:341-344.
Files in This Item:
File Name/Size DocType Version Access License
2904.pdf(245KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Lu LW]'s Articles
[Zhang YH]'s Articles
[Xu ZT]'s Articles
Baidu academic
Similar articles in Baidu academic
[Lu LW]'s Articles
[Zhang YH]'s Articles
[Xu ZT]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Lu LW]'s Articles
[Zhang YH]'s Articles
[Xu ZT]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.