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题名: Si-based resonant-cavity-enhanced photodetector
作者: Wang QM;  Li C;  Cheng BW;  Yang QQ
出版日期: 2000
会议日期: NOV 08-10, 2000
摘要: Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.
会议名称: Conference on Optical Interconnects for Telecommunication and Data Communications
KOS主题词: Lithography, Electron beam
会议文集: OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang QM; Li C; Cheng BW; Yang QQ .Si-based resonant-cavity-enhanced photodetector .见:SPIE-INT SOC OPTICAL ENGINEERING .OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2000,107-111
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