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题名: Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
作者: Kang JY;  Shen YW;  Wang ZG
出版日期: 2002
会议日期: SEP 24-28, 2001
摘要: Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.
会议名称: 9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX)
KOS主题词: Defects;  Photoluminescence;  Epitaxial films;  Magnesium
会议文集: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Kang JY; Shen YW; Wang ZG .Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers .见:ELSEVIER SCIENCE SA .MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91,PO BOX 564, 1001 LAUSANNE, SWITZERLAND ,2002,303-307
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