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题名: Space grown semi-insulating gallium arsenide single crystal and its application
作者: Chen NF;  Zhong XR;  Zhang M;  Lin LY
出版日期: 2002
会议日期: JUL, 2000
摘要: Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.
会议名称: G0 1 Symposium of COSPAR Scientific Commission G held at the 33rd COSPAR Scientific Assembly
KOS主题词: Stoichiometry;  Defects
会议文集: IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen NF; Zhong XR; Zhang M; Lin LY .Space grown semi-insulating gallium arsenide single crystal and its application .见:PERGAMON-ELSEVIER SCIENCE LTD .IMPACT OF THE GRAVITY LEVEL ON MATERIALS PROCESSING AND FLUID DYNAMICS, 29 (4),THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, ENGLAND ,2002,537-540
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