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题名: Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots
作者: Jiang DS;  Gong Q;  Chen YB;  Sun BQ;  Liang JB;  Wang ZG
出版日期: 2000
会议日期: AUG 22-26, 1999
摘要: The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.
会议名称: 26th International Symposium on Compound Semiconducors
会议文集: COMPOUND SEMICONDUCTORS 1999, (166)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Jiang DS; Gong Q; Chen YB; Sun BQ; Liang JB; Wang ZG .Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots .见:IOP PUBLISHING LTD .COMPOUND SEMICONDUCTORS 1999, (166),DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND ,2000,257-260
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