高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: Studies of 6H-SiC devices
作者: Wang SR;  Liu ZL
出版日期: 2002
会议日期: DEC 05-09, 2001
摘要: Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.
会议名称: Korea-China Joint Symposium on Smiconductor Physics and Device Applications
KOS主题词: SIC;  junction diodes
会议文集: CURRENT APPLIED PHYSICS, 2 (5)
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

条目无相关文件。



许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Wang SR; Liu ZL .Studies of 6H-SiC devices .见:ELSEVIER SCIENCE BV .CURRENT APPLIED PHYSICS, 2 (5),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2002,393-399
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Wang SR]的文章
 [Liu ZL]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Wang SR]的文章
 [Liu ZL]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发