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题名: Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films
作者: Chen CY;  Chen WD;  Song SF;  Hsu CC
出版日期: 2002
会议日期: JUN 10-14, 2002
摘要: Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.
会议名称: Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
KOS主题词: Photoluminescence;  Luminescence;  Intensity;  system
会议文集: INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen CY; Chen WD; Song SF; Hsu CC .Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films .见:WORLD SCIENTIFIC PUBL CO PTE LTD .INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29),JOURNAL DEPT PO BOX 128 FARRER ROAD, SINGAPORE 912805, SINGAPORE ,2002,4246-4249
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