Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range.
会议名称:
Symposium on Silicon-based Heterostructure Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)
会议文集:
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (28-29)
