Design of high brightness cubic-GaN LEDs grown on GaAs substrate

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Design of high brightness cubic-GaN LEDs grown on GaAs substrate
	Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H; Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
	2003
会议名称	11th Seoul International Symposium on the Physics of Semiconductors and Applications
会议录名称	JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42
页码	S753-S756
会议日期	AUG 20-23, 2002
会议地点	SEOUL, SOUTH KOREA
出版地	635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA
出版者	KOREAN PHYSICAL SOC
ISSN	0374-4884
部门归属	chinese acad sci, state key lab integrated optoelect, inst semicond, beijing 100083, peoples r china
摘要	The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.
关键词	Wafer Bunding Cubic Gan Light-emitting-diodes Field-effect Transistor Single-crystal Gan Microwave Performance Mirror Junction
学科领域	光电子学
主办者	AIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14859
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun YP Chinese Acad Sci State Key Lab Integrated Optoelect Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun YP,Shen XM,Zhang ZH,et al. Design of high brightness cubic-GaN LEDs grown on GaAs substrate[C]. 635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA:KOREAN PHYSICAL SOC,2003:S753-S756.

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