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题名: Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)
作者: Yu JZ;  Li C;  Cheng BW;  Wang QM
出版日期: 2004
会议日期: SEP 21-26, 2003
摘要: Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.
会议名称: 10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003)
KOS主题词: Optical fiber communication;  responsivity;  semiconductor-insulator boundaries
会议文集: GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yu JZ; Li C; Cheng BW; Wang QM .Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) .见:TRANS TECH PUBLICATIONS LTD .GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 95-96,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2004,255-260
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