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题名: Study of infrared luminescence from Er-implanted GaN films
作者: Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC
出版日期: 2004
会议日期: DEC 07-12, 2003
摘要: In this study, we report the dependences of infrared luminescence properties of Er-implanted GaN thin films (GaN:Er) on the kinds of substrates used to grow GaN, the growth techniques of GaN, the implantation parameters and annealing procedures. The experimental results showed that the photoluminescence (PL) intensity at 1.54 mum was severely influenced by different kinds of substrates. The integrated PL peak intensity from GaN:Er /Al2O3 (00001) was three and five times stronger than that from GaN:Er /Si (111) grown by molecular beam epitaxy (MBE) and by metalorganic chemical vapor deposition (MOCVD), respectively. The PL spectra observed from GaN:Er/Al2O3 (0001) grown by MOCVD and by MBE displayed a similar feature, but those samples grown by MOCVD exhibited a stronger 1.54 mum PL. It was also found that there was a strong correlation between the PL intensity with ion implantation parameters and annealing procedures. Ion implantation induced damage in host material could be only partly recovered by an appropriate annealing temperature procedure. The thermal quenching of PL from 15 to 300 K was also estimated. In comparison with the integrated PL intensity at 15 K, it is reduced by only about 30 % when going up to 300 K for GaN:Er/Al2O3 sample grown by MOCVD. Our results also show that the strongest PL intensity comes from GaN:Er grown on Al2O3 substrate by MOCVD. (C) 2004 Elsevier B.V. All rights reserved.
会议名称: International Conference on Materials for Advanced Technologies
KOS主题词: doping;  Metal organic chemical vapor deposition;  atomic layer deposition;  Gallium compounds;  Erbium
会议文集: JOURNAL OF CRYSTAL GROWTH, 268 (3-4)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC .Study of infrared luminescence from Er-implanted GaN films .见:ELSEVIER SCIENCE BV .JOURNAL OF CRYSTAL GROWTH, 268 (3-4),PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS ,2004,466-469
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