Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices
	Mao DS; Tan MQ; Chen LH; Mao DS Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Semiconductor Lasers III
会议录名称	SEMICONDUCTOR LASERS III, 3547
页码	315-318
会议日期	SEP 16-18, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3008-0
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The paper reports a method of depositing SiO2, SiNx, a:Si, Si3N4 and SiOxNy dielectric thin films by electron cyclotron resonance plasma chemical vapor deposition (ECR CVD) on InP, InGaAs and other compound semiconductor optoelectronic devices,and give a technology of depositing dielectric thin films and optical coatings by ECR CVD on Laser's Bars. The experiment results show the dielectric thin films and optical coatings are stable at thermomechanical property,optical properties and the other properties. In addition, the dielectric thin film deposition that there is low leakage current is reported for using as diffusion and ion implatation masks in the paper. In the finally, the dielectric film refractive index can be accurately controlled by the N-2/O-2/Ar gas flow rate.
关键词	Ecr Cvd Thin Film Photoelectronic Device
学科领域	半导体物理
主办者	SPIE.; COS.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13893
专题	中国科学院半导体研究所（2009年前）
通讯作者	Mao DS Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Mao DS,Tan MQ,Chen LH,et al. Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:315-318.

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