高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
作者: Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH
出版日期: 1998
会议日期: SEP 16-18, 1998
摘要: In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.
会议名称: Semiconductor Lasers III
KOS主题词: Semiconductor lasers
会议文集: SEMICONDUCTOR LASERS III, 3547
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
3045.pdf356KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Yang GW; Xu ZT; Xu JY; Ma XY; Zhang JM; Chen LH .Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR LASERS III, 3547,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,64-70
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Yang GW]的文章
 [Xu ZT]的文章
 [Xu JY]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Yang GW]的文章
 [Xu ZT]的文章
 [Xu JY]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发