高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: Growth of Fe doped semi-insulating InP by LP-MOCVD
作者: Yan XJ;  Zhu HL;  Wang W;  Xu GY;  Zhou F;  Ma CH;  Wang XJ;  Tian HL;  Zhang JY;  Wu RH;  Wang QM
出版日期: 1998
会议日期: SEP 18-19, 1998
摘要: The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semiinsulating InP material whose resistivity is equal to 2.0x10(8)Omega*cm and the breakdown field is Beater than 4.0x10(4)Vcm(-1) has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene (Fe(C5H5)(2)) flow constant at 620 degrees C growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency; eta, is equal to 8.7x10(-4) at 20mbar growth pressure and 620 degrees C growth temperature by the comparison of calculated and experimental results.
会议名称: Conference on Integrated Optoelectronics II
KOS主题词: atomic layer deposition
会议文集: INTEGRATED OPTOELECTRONICS II, 3551
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
3036.pdf536KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Yan XJ; Zhu HL; Wang W; Xu GY; Zhou F; Ma CH; Wang XJ; Tian HL; Zhang JY; Wu RH; Wang QM .Growth of Fe doped semi-insulating InP by LP-MOCVD .见:SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,80-83
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Yan XJ]的文章
 [Zhu HL]的文章
 [Wang W]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Yan XJ]的文章
 [Zhu HL]的文章
 [Wang W]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发