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题名: Preparation and photoluminescence of nc-Si/SiO2 MQW
作者: Cheng BW;  Yu JZ;  Yu Z;  Lei ZL;  Li DZ;  Wang QM
出版日期: 1998
会议日期: SEP 18-19, 1998
摘要: The deposition rate and refractive index for a-Si(amorphous silicon) and SiO2 grown by PECVD were studied under different pressure, power and proportion of reactant source gases. a-Si/SiO2 MQW(multi-quantum well) with high quality was deposited under suitable conditions, in which the thickness of the a-Si layers is several nanometers. The sample of a-Si/SiO2 MQW was crystallized by laser annealing. Because of the confinement of the SiO2 layers, crystalline grains were formed during the a-Si layers were being crystallized. The size of the crystalline grains were not more than the thickness of the a-Si layers. The a-Si layers were crystallized to be nanometer crystalline silicon(nc-Si), therefore, nc-Si/SiO2 MQW was formed. For the a-Si/SiO2 MQW with 4.0nm a-Si wells separated by 5nm SiO2 barries, most of the a-Si were crystallized to silicon grains after laser annealing,and the size of the grains is 3.8nm. Strong photoluminescence with three peaks from the nc-Si/SiO2 MQW was detected at 10K. The wavelength of the peaks were 810nm, 825nm and 845nm, respectively.
会议名称: Conference on Integrated Optoelectronics II
会议文集: INTEGRATED OPTOELECTRONICS II, 3551
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Cheng BW; Yu JZ; Yu Z; Lei ZL; Li DZ; Wang QM .Preparation and photoluminescence of nc-Si/SiO2 MQW .见:SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,13-17
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