SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
On the nature of iron in InP: A FTIR study
Han YJ; Liu XL; Lao JH; Lin LY; Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
1998
Conference NameConference on Integrated Optoelectronics II
Source PublicationINTEGRATED OPTOELECTRONICS II, 3551
Pages1-4
Conference DateSEP 18-19, 1998
Conference PlaceBEIJING, PEOPLES R CHINA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-3012-9
metadata_83chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
AbstractFe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.
KeywordIron Phonon Sideband Semi-insulating Inp
Subject Area光电子学
Funding OrganizationSPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13851
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorHan YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:1-4.
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