On the nature of iron in InP: A FTIR study

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	On the nature of iron in InP: A FTIR study
	Han YJ; Liu XL; Lao JH; Lin LY; Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
Conference Name	Conference on Integrated Optoelectronics II
Source Publication	INTEGRATED OPTOELECTRONICS II, 3551
Pages	1-4
Conference Date	SEP 18-19, 1998
Conference Place	BEIJING, PEOPLES R CHINA
Publication Place	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
Publisher	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3012-9
metadata_83	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Abstract	Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.
Keyword	Iron Phonon Sideband Semi-insulating Inp
Subject Area	光电子学
Funding Organization	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13851
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:1-4.

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