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题名: Dependence of ultra-thin gate oxide reliability on surface cleaning approach
作者: Gao WY;  Liu ZL;  He ZJ
出版日期: 1998
会议日期: OCT 21-23, 1998
摘要: In this paper, we investigate the effect of silicon surface cleaning prior to oxidation on the reliability of ultra-thin oxides. It is demonstrated that chemical preoxide grown in H2SO4/H2O2 (SPM) solution prior to oxidation provides better oxide integrity than both HF-based solution dipping and preoxide grown in RCA SC1 or SC2 solutions. It is also found that the oxides with SPM preoxide exhibit better hot-carrier immunity than the RCA cleaned oxides.
会议名称: 5th International Conference on Solid-State and Integrated Circuit Technology
KOS主题词: chemical treatment;  Quality;  Technology;  Photography--Films;  Finite volume method
会议文集: 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Gao WY; Liu ZL; He ZJ .Dependence of ultra-thin gate oxide reliability on surface cleaning approach .见:IEEE .1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,1998,291-294
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