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题名: JFET SOS devices: Processing and gamma radiation effects
作者: Nie JP;  Liu ZL;  He ZJ;  Yu F;  Li GH
出版日期: 1998
会议日期: OCT 21-23, 1998
摘要: A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.
会议名称: 5th International Conference on Solid-State and Integrated Circuit Technology
KOS主题词: Silicon
会议文集: 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Nie JP; Liu ZL; He ZJ; Yu F; Li GH .JFET SOS devices: Processing and gamma radiation effects .见:IEEE .1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,1998,67-70
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