Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.
会议名称:
2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG .Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD .见：OHMSHA LTD .BLUE LASER AND LIGHT EMITTING DIODES II,1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN ,1998,560-563
