Knowledge Management System Of Institute of Semiconductors,CAS
Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD | |
Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG; Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China. | |
1998 | |
Conference Name | 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED) |
Source Publication | BLUE LASER AND LIGHT EMITTING DIODES II |
Pages | 560-563 |
Conference Date | SEP 29-OCT 02, 1998 |
Conference Place | CHIBA, JAPAN |
Publication Place | 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN |
Publisher | OHMSHA LTD |
ISBN | 4-274-90245-5 |
metadata_83 | chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
Abstract | Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed. |
Keyword | Metastability Antisite |
Subject Area | 半导体材料 |
Funding Organization | Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/13807 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China. |
Recommended Citation GB/T 7714 | Wang LS,Yue GZ,Liu XL,et al. Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD[C]. 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN:OHMSHA LTD,1998:560-563. |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment