Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

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	Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD
	Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG; Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	1998
Conference Name	2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
Source Publication	BLUE LASER AND LIGHT EMITTING DIODES II
Pages	560-563
Conference Date	SEP 29-OCT 02, 1998
Conference Place	CHIBA, JAPAN
Publication Place	1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN
Publisher	OHMSHA LTD
ISBN	4-274-90245-5
metadata_83	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Abstract	Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.
Keyword	Metastability Antisite
Subject Area	半导体材料
Funding Organization	Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13807
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Wang LS,Yue GZ,Liu XL,et al. Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD[C]. 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN:OHMSHA LTD,1998:560-563.

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