Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD
	Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG; Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	1998
会议名称	2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
会议录名称	BLUE LASER AND LIGHT EMITTING DIODES II
页码	560-563
会议日期	SEP 29-OCT 02, 1998
会议地点	CHIBA, JAPAN
出版地	1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN
出版者	OHMSHA LTD
ISBN	4-274-90245-5
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.
关键词	Metastability Antisite
学科领域	半导体材料
主办者	Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13807
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang LS,Yue GZ,Liu XL,et al. Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD[C]. 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN:OHMSHA LTD,1998:560-563.