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题名: The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy
作者: Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG
出版日期: 1998
会议日期: SEP 29-OCT 02, 1998
摘要: Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.
会议名称: 2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
KOS主题词: Aluminum oxide
会议文集: BLUE LASER AND LIGHT EMITTING DIODES II
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG .The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy .见:OHMSHA LTD .BLUE LASER AND LIGHT EMITTING DIODES II,1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN ,1998,93-96
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