高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 会议论文

题名: High quality hydrogenated amorphous silicon films with significantly improved stability
作者: Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL
出版日期: 1999
会议日期: APR 14-17, 1998
摘要: High quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple "uninterrupted growth/annealing" plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 10(6), and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.
会议名称: Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
KOS主题词: Photoconductivity;  Increase
会议文集: AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
专题: 中国科学院半导体研究所(2009年前)_会议论文

条目包含的文件

文件 大小格式
2977.pdf390KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL .High quality hydrogenated amorphous silicon films with significantly improved stability .见:MATERIALS RESEARCH SOCIETY .AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1999,969-974
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Sheng SR]的文章
 [Liao XB]的文章
 [Ma ZX]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Sheng SR]的文章
 [Liao XB]的文章
 [Ma ZX]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发