Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon

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	Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon
	Yue GZ; Chen LF; Wang Q; Iwaniczko E; Kong GL; Baugh J; Wu Y; Han DX; Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
	1999
Conference Name	Symposium on Amorphous and Microcrystalline Silicon Technology-1998, at the MRS Spring Meeting
Source Publication	AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 507
Pages	685-690
Conference Date	APR 14-17, 1998
Conference Place	SAN FRANCISCO, CA
Publication Place	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
Publisher	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-413-0
metadata_83	acad sinica, inst semicond, beijing 100083, peoples r china
Abstract	Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from similar to 2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number similar to 2000 cm(-1), and the less stable one exhibits a decrease at similar to 2040 cm(-1) and an increase at similar to 1880 cm(-1).
Keyword	Vibrational-spectra
Subject Area	半导体材料
Funding Organization	Mat Res Soc.; Akzo Nobel.; dpiX A Xerox Co.; Fuji Elect Corp Res & Dev Ltd.; Kaneka Corp.; Mitsui Chem Co Ltd.; NAPS France.; Natl Renewable Energy Lab.; Sanyo Elect Co Ltd.; Tokuyama Corp.; Voltaix Inc.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13795
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Yue GZ Acad Sinica Inst Semicond POB 912 Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Yue GZ,Chen LF,Wang Q,et al. Light-induced change of Si-H bond absorption in hydrogenated amorphous silicon[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1999:685-690.

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