High brightness AlGaInP orange light emitting diodes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High brightness AlGaInP orange light emitting diodes
	Li YZ; Wang GH; Ma XY; Peng HI; Wang ST; Chen LH; Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Display Devices and Systems II
会议录名称	DISPLAY DEVICES AND SYSTEMS II, 3560
页码	93-95
会议日期	SEP 16-17, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3021-8
部门归属	chinese acad sci, inst semicond, natl engn res ctr optoelect devices, beijing 100083, peoples r china
摘要	Orange AlGaInP high brightness light emitting diodes (LEDs) were fabricated by low pressure metalorganic chemical vapor deposition(LP-MOCVD) technology. AlGaInP double heterojunction structure was used as active layer. 15 pairs of Al0.5Ga0.5As/AlAs distributed Bragg reflector and 7 mu m Al0.8Ga0.2As current spreading layer were employed to reduce the absorption of GaAs substrate and upper anode respectively. At 20mA the LEDs emitting wavelength was between 600-610nm with 18.3nm FWHM, 0.45mW radiation power and 1.7% external quantum efficiency. Brightness of the LED chips and LED lamps with 15 degrees viewing angle(2 theta(1/2)) reached 30mcd and 1000mcd respectively.
关键词	High Brightness Led Mocvd Algainp
学科领域	光电子学
主办者	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA China Opt & Optoelectr Mfg Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13787
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li YZ,Wang GH,Ma XY,et al. High brightness AlGaInP orange light emitting diodes[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:93-95.

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