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题名: High temperature annealing behaviors of luminescent SIOx : H films
作者: Ma ZX;  Xiang XB;  Sheng SR;  Liao XB;  Shao CL;  Umeno M
出版日期: 1999
会议日期: APR 05-08, 1999
摘要: The effects of high temperature annealing on the microstructure and optical properties of luminescent SiOx:H films have been investigated. Micro-Raman scattering and IR absorption, in combination with atomic force microscopy (AFM), provide evidence for the existence of both a-Si clusters in the as-grown a-SiOx:H and Si nanocrystals in the 1170 degrees C annealed films. The dependence of optical coefficients (alpha) on photon energy (h nu) near the absorption edge (E-g) is found to follow the square root law: (alpha h nu)(1/2) proportional to (E-g - h nu), indicating that nano-Si embedded in SiO2 is still an indirect material. A comparison of the deduced absorption edge with the PL spectra shows an obvious Stokes shift, suggesting that phonons should be involved in the optical transition process.
会议名称: Symposium E on Luminescent Materials at the 1999 MRS Spring Meeting
KOS主题词: Raman effect;  Raman spectroscopy;  Silicon;  Photoluminescence
会议文集: LUMINESCENT MATERIALS, 560
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Ma ZX; Xiang XB; Sheng SR; Liao XB; Shao CL; Umeno M .High temperature annealing behaviors of luminescent SIOx : H films .见:MATERIALS RESEARCH SOCIETY .LUMINESCENT MATERIALS, 560,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1999,101-106
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