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题名: The influence of oxygen content on photoluminescence from Er-doped SiOx
作者: Chen WD;  Liang JJ;  Hsu CC
出版日期: 1999
会议日期: APR 05-08, 1999
摘要: SiOx films with oxygen concentrations ranging 13-46 at.% were deposited by plasma enhanced chemical vapor deposition (PECVD) technique using: pure SiH4 and N2O mixture. Erbium was then implanted at an energy of 500 KeV with dose of 2x10(15) ions/cm(2). The samples were subsequently annealed in N-2 for 20 sec at temperatures of (300-950 degrees C). Room temperature (RT) photo-luminescence (PL) data were collected by Fourier Transform Infrared Spectroscopy (FTIS) with an argon laser at a wavelength of 514.5 nm and an output power from 5 to 2500 mw. The intense room-temperature luminescence was observed around 1.54 mu m. The luminescence intensity increases by 2 orders of magnitude as compared with that of Er-doped Czochralski (CZ) Si. We found that the Er3+ luminescence depends strongly on the SiOx microstructure. Our experiment also showed that the silicon grain radius decreased with increasing oxygen content and finally formed micro-crystalline silicon or nano-crystalline silicon. As a result, these silicon small particles could facilitate the energy transfer to Er3+ and thus enhanced the photoluminescence intensity.
会议名称: Symposium E on Luminescent Materials at the 1999 MRS Spring Meeting
会议文集: LUMINESCENT MATERIALS, 560
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Chen WD; Liang JJ; Hsu CC .The influence of oxygen content on photoluminescence from Er-doped SiOx .见:MATERIALS RESEARCH SOCIETY .LUMINESCENT MATERIALS, 560,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,1999,107-111
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