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Cooperative spontaneous emission of excitons in the semiconductor microcavity | |
Liu S; Lin SM; Wang QM; Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China. | |
2000 | |
Conference Name | Conference on Vertical-Cavity Surface-Emitting Lasers IV |
Source Publication | VERTICAL-CAVITY SURFACE-EMITTING LASERS IV, 3946 |
Pages | 136-141 |
Conference Date | JAN 26-28, 2000 |
Conference Place | SAN JOSE, CA |
Publication Place | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-3563-5 |
metadata_83 | chinese academe, inst semicond, natl optoelect integrat lab, beijing 100083, peoples r china |
Abstract | We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. |
Keyword | Spontaneous Emission Microcavity Anisotropy Polarized Exciton Surface-emitting Lasers Polariton Photoluminescence Cavity Operation |
Subject Area | 光电子学 |
Funding Organization | SPIE. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/13773 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Liu S Chinese Academe Inst Semicond Natl Optoelect Integrat Lab Beijing 100083 Peoples R China. |
Recommended Citation GB/T 7714 | Liu S,Lin SM,Wang QM,et al. Cooperative spontaneous emission of excitons in the semiconductor microcavity[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:136-141. |
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