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题名: Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
作者: Li C;  Yang QQ;  Ou HY;  Wang QM
出版日期: 2000
会议日期: MAY 21-24, 2000
摘要: A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.
会议名称: 50th Electronic Components & Technology Conference (ECTC 01)
KOS主题词: Optical instruments
会议文集: 50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li C; Yang QQ; Ou HY; Wang QM .Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors .见:IEEE .50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2000,1486-1488
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