Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors
	Li C; Yang QQ; Ou HY; Wang QM; Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	50th Electronic Components & Technology Conference (ECTC 01)
会议录名称	50TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE - 2000 PROCEEDINGS
页码	1486-1488
会议日期	MAY 21-24, 2000
会议地点	LAS VEGAS, NV
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-5908-9
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.
关键词	Mirrors
学科领域	光电子学
主办者	IEEE.; IEEE Components, Packaging & Mfg Technol Soc.; Electe Indust Alliance.; ECA Electr Components, Assemblies, & Mat Assoc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13767
专题	中国科学院半导体研究所（2009年前）
通讯作者	Li C Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Li C,Yang QQ,Ou HY,et al. Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2000:1486-1488.

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