High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers
	Xiu ZT; Zhang JM; Ma XY; Yang GW; Shen GD; Chen LH; Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	Conference on In-Plane Semiconductor Lasers IV
会议录名称	IN-PLANE SEMICONDUCTOR LASERS IV, 3947
页码	66-69
会议日期	JAN 24-25, 2000
会议地点	SAN JOSE, CA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3564-3
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	980nm InGaAs/InGaAsP/AlGaAs strained quantum well lasers,vitta novel large optical cavity and asymmetrical claddings was fabricated bg MOCVD. Very high differential quantum efficiency elf 90% (1.15W/A) and low vertical divergence angle of 24 degrees at long cavity length were obtained for 100 mu m stripe lasers. The differential quantum efficiency is up to 94% (1.20) at cavity length of 500 mu m.
关键词	Sqw Lasers Ingaasp Power Fiber Nm
学科领域	光电子学
主办者	SPIE.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13765
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Xiu ZT,Zhang JM,Ma XY,et al. High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:66-69.

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