Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy
	Lu DC; Lin LY; Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	2001
Conference Name	1st International Symposium on Microgravity Research and Applications in Physical Sciences and Biotechnology
Source Publication	FIRST INTERNATIONAL SYMPOSIUM ON MICROGRAVITY RESEARCH & APPLICATIONS IN PHYSICAL SCIENCES AND BIOTECHNOLOGY, VOLS I AND II, PROCEEDINGS, 454
Pages	425-430
Conference Date	SEP 10-15, 2000
Conference Place	SORRENTO, ITALY
Publication Place	8-10 RUE MARIO NIKIS, 75738 PARIS, FRANCE
Publisher	EUROPEAN SPACE AGENCY
ISSN	0379-6566
ISBN	92-9092-657-0
metadata_83	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
Abstract	A thermodynamic model for the GaSb-GaCl3 system in a closed quartz ampoule was proposed. The species in the gas phase are GaCl, GaCl3, Sb-4, Sb-2. The partial pressures of these species and total pressure in the ampoule have been calculated. The calculated results indicate that the equilibrium partial pressures of GaCl, GaCl3, Sb4, Sb2 and the total pressure in the ampoule have strong dependence on temperature, free volume inside the closed ampoule and amount of transport agent GaCl3. The total pressure will give strong influence not only on the flow pattern in the ampoule, but also on the uniformity of the epilayer.
Keyword	Transport
Subject Area	半导体材料
Funding Organization	European Space Agcy.; Seconda Univ Napoli.; ASI.; CNES.; CSA.; DLR.; NASA.; NASDA.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13737
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Lu DC,Lin LY,Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci Beijing 100083 Peoples R China.. Thermodynamic analysis of GaSb-GaCl3 vapor phase epitaxy[C]. 8-10 RUE MARIO NIKIS, 75738 PARIS, FRANCE:EUROPEAN SPACE AGENCY,2001:425-430.

Files in This Item:
File Name/Size	DocType	Version	Access	License
2897.pdf（224KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库