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In situ annealing during the growth of relaxed SiGe | |
Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM; Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. | |
2000 | |
Conference Name | Conference on Optical and Infrared Thin Films |
Source Publication | OPTICAL AND INFRARED THIN FILMS, 4094 |
Pages | 93-99 |
Conference Date | 36739 |
Conference Place | SAN DIEGO, CA |
Publication Place | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Publisher | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-3739-5 |
metadata_83 | chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china |
Abstract | In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2). |
Keyword | Ultrahigh Vacuum Chemical Vapor Deposition Sige Refractive High Energy Electron Diffraction Tansmission Electron Microscopy Double Crystal X-ray Diffraction Mobility 2-dimensional Electron Critical Thickness Strained Layers Ge Relaxation Epilayers Si1-xgex Gesi/si Gases |
Subject Area | 光电子学 |
Funding Organization | SPIE. |
Indexed By | CPCI-S |
Language | 英语 |
Document Type | 会议论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/13719 |
Collection | 中国科学院半导体研究所(2009年前) |
Corresponding Author | Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China. |
Recommended Citation GB/T 7714 | Li DZ,Huang CJ,Cheng BW,et al. In situ annealing during the growth of relaxed SiGe[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:93-99. |
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