SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
In situ annealing during the growth of relaxed SiGe
Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM; Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
2000
Conference NameConference on Optical and Infrared Thin Films
Source PublicationOPTICAL AND INFRARED THIN FILMS, 4094
Pages93-99
Conference Date36739
Conference PlaceSAN DIEGO, CA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-3739-5
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
AbstractIn this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2).
KeywordUltrahigh Vacuum Chemical Vapor Deposition Sige Refractive High Energy Electron Diffraction Tansmission Electron Microscopy Double Crystal X-ray Diffraction Mobility 2-dimensional Electron Critical Thickness Strained Layers Ge Relaxation Epilayers Si1-xgex Gesi/si Gases
Subject Area光电子学
Funding OrganizationSPIE.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13719
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLi DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Li DZ,Huang CJ,Cheng BW,et al. In situ annealing during the growth of relaxed SiGe[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:93-99.
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