In situ annealing during the growth of relaxed SiGe

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In situ annealing during the growth of relaxed SiGe
	Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM; Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	2000
Conference Name	Conference on Optical and Infrared Thin Films
Source Publication	OPTICAL AND INFRARED THIN FILMS, 4094
Pages	93-99
Conference Date	36739
Conference Place	SAN DIEGO, CA
Publication Place	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
Publisher	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3739-5
metadata_83	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
Abstract	In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a little lower temperature to keep the surface smooth, which will provide the gliding dislocations a wider channel and less low energy nucleation sites on the surface. Therefore, the dislocation density may be reduced. However, the motion of the existing threading dislocations cannot retain equilibrium at lower temperature, strain will accumulate and be in favor of the nucleation of dislocation. In situ annealing was used to reduce the residual strain in the sample during the low-temperature growth of SiGe. A fully relaxed Si0.8Ge0.2 layer was obtained with the surface dislocation density of 3x10(5)cm(-2).
Keyword	Ultrahigh Vacuum Chemical Vapor Deposition Sige Refractive High Energy Electron Diffraction Tansmission Electron Microscopy Double Crystal X-ray Diffraction Mobility 2-dimensional Electron Critical Thickness Strained Layers Ge Relaxation Epilayers Si1-xgex Gesi/si Gases
Subject Area	光电子学
Funding Organization	SPIE.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13719
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Li DZ,Huang CJ,Cheng BW,et al. In situ annealing during the growth of relaxed SiGe[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2000:93-99.

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