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题名: Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix
作者: Ma ZX;  Liao XB;  Zheng WM;  Yu J;  Chu JH
出版日期: 2000
会议日期: MAY 08-11, 2000
摘要: Structural dependence on annealing of a-SiOx:H was studied by using infrared absorption and Raman scattering. The appearance of Raman peaks in the range of 513-519cm(-1) after 1170 degreesC annealing was interpreted as the formation nanocrystalline silicon with the sizes from 3-10nm. The Raman spectra also show the existence of amorphous-like silicon phase, which is associated with Si-Si bond re-construction at boundaries of silicon nanocrystallites. The presence of the shoulder at 980cm(-1) of Si-O-Si stretching vibration at 1085cm(-1) in infrared spectra imply that except that SiO2 phase, there is silicon sub-oxide phase in the films annealed at 1170 degreesC. This sub-oxide phase is located at the interface between Si crystallites and SiO2, and thus support the shell model for the mixed structures of Si grains and SiO2 matrix.
会议名称: 4th International Conference on Thin Film Physics and Applications
KOS主题词: Raman effect;  Infrared radiation;  Photography--Films;  Finite volume method
会议文集: FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Ma ZX; Liao XB; Zheng WM; Yu J; Chu JH .Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix .见:SPIE-INT SOC OPTICAL ENGINEERING .FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2000,258-261
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