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题名: Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers
作者: Yu LJ;  Guo WH;  Huang YZ
出版日期: 2001
会议日期: NOV 12-15, 2001
摘要: Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.
会议名称: Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
KOS主题词: electromagnetic wave polarisation;  quantum cascade lasers
会议文集: APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Yu LJ; Guo WH; Huang YZ .Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers .见:SPIE-INT SOC OPTICAL ENGINEERING .APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2001,539-545
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