Optical characterization of the Ge/Si (001) islands in multilayer structure

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical characterization of the Ge/Si (001) islands in multilayer structure
	Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM; Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
	2001
会议名称	Asia-Pacific Optical and Wireless Communications Conference (APOC 2001)
会议录名称	APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580
页码	202-208
会议日期	NOV 12-15, 2001
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-4310-7
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	We show that the observed temperature dependence of the photoluminescence (PL) features can be consistently explained in terms of thermally activated carrier transfer processes in a multilayer structure of the self-organized Ge/Si(001) islands. The type II (electron confinement in Si) behavior of the Ge/Si islands is verified. With elevated temperature, the thermally activated electrons and holes enter the Ge islands from the Si and from the wetting layer (WL), respectively. An involvement of the type I (spatially direct) into type II (spatially indirect) recombination transition takes place at a high temperature.
关键词	Ge/si Islands Quantum Dot Band Alignment Pl Si/si1-xgex Quantum-wells Stranski-krastanov Growth Ii Band Alignment Ge Islands Temperature-dependence Photoluminescence Layers Luminescence Organization Mechanism
学科领域	光电子学
主办者	SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13649
专题	中国科学院半导体研究所（2009年前）
通讯作者	Huang CJ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Huang CJ,Zuo YH,Li C,et al. Optical characterization of the Ge/Si (001) islands in multilayer structure[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2001:202-208.

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