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A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth | |
Zhang RY; Dong J; Zhou F; Zhu HL; Shu HY; Bian J; Wang LF; Tian HL; Wang W; Zhang RY Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China. | |
2001 | |
会议名称 | Asia-Pacific Optical and Wireless Communications Conference (APOC 2001) |
会议录名称 | APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS:OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580 |
页码 | 116-123 |
会议日期 | NOV 12-15, 2001 |
会议地点 | BEIJING, PEOPLES R CHINA |
出版地 | 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
出版者 | SPIE-INT SOC OPTICAL ENGINEERING |
ISSN | 0277-786X |
ISBN | 0-8194-4310-7 |
部门归属 | chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china |
摘要 | A novel approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of graded tensile strained bulk-like structure. which can not only enhance TM mode material gain and further realize polarization-insensitivity, but also get a large 3dB bandwidth due to different strain introduced into the active layer. 3dB bandwidth more than 40nm. 65nm has been obtained in die experiment and theory, respectively. The characteristics of such polarization insensitive structure have been analyzed, The influence of the amount of strain and of the thickness of strain layer on the polarization insensitivity has been discussed. |
关键词 | Spot-size Converter Gain |
学科领域 | 光电子学 |
主办者 | SPIE.; China Opt & Optoelectr Manufacturers Assoc.; Minist Informat Ind.; China Inst Commun.; NEL NTT Electr Corp.; Credit Suisse First Boston Technol Grp.; China Telecom.; Huawei Technologies.; ZTE Corp.; SANY Optilayer Co Ltd.; Dateng Telecom.; Photon Technol.; O Net Commun Ltd.; China Minist Sci & Technol.; Alcatel.; Corning.; Australia Opt Soc.; Beijing Univ Posts & Telecommun.; Korea Assoc Photon Ind Dev.; Optoelectr Ind Dev Assoc.; Optoelectr Ind & Technol Dev Assoc.; Opt Soc India.; Opt Soc Japan.; Opt Soc Korea.; Photon Ind Dev Assoc.; Photon Assoc.; SPIE Asia Pacific Chapters.; SPIE Tech Grp Opt Networks.; Tsinghua Univ. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/13647 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Zhang RY Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang RY,Dong J,Zhou F,et al. A novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2001:116-123. |
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