Optical study of electronic states in GaAsN

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	Optical study of electronic states in GaAsN
	Luo XD; Yang CL; Huang JS; Xu ZY; Liu J; Ge WK; Zhang Y; Mascarenhas A; Xin HP; Tu CW; Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
	2002
会议名称	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
会议录名称	COMMAD 2002 PROCEEDINGS
页码	587-590
会议日期	DEC 11-13, 2002
会议地点	SYDNEY, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7571-8
部门归属	chinese acad sci, inst semicond, nlsm, beijing 100083, peoples r china
摘要	GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.
关键词	Molecular-beam Epitaxy Temperature Photoluminescence Quantum-well Alloys Relaxation Gaas1-xnx
学科领域	半导体物理
主办者	Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13645
专题	中国科学院半导体研究所（2009年前）
通讯作者	Luo XD Chinese Acad Sci Inst Semicond NLSM Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Luo XD,Yang CL,Huang JS,et al. Optical study of electronic states in GaAsN[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:587-590.

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