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题名: Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline
作者: Zhang SB;  Liao XB;  Xu YY;  Hu ZH;  Zeng XB;  Diao HW;  Luo MC;  Kong G
出版日期: 2003
会议日期: DEC 02, 2001-DEC 05, 2002
摘要: A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.
会议名称: Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
KOS主题词: Light--Scattering;  Thin films;  Metric system;  Silicon;  absorption;  States;  Cantons
会议文集: QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G .Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline .见:MATERIALS RESEARCH SOCIETY .QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737,506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA ,2003,679-684
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