Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes
	Zhang ZY; Li CM; Jin P; Meng XQ; Xu B; Ye XL; Wang ZG; Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
	2003
会议名称	Symposium on Quantum Confined Semiconductor Nanostructures held at the 2002 MRS Fall Meeting
会议录名称	QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 737
页码	119-127
会议日期	DEC 02, 2001-DEC 05, 2002
会议地点	BOSTON, MA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-674-5
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	We have investigated the optical properties of asymmetric multiple layer stacked self-assembled InAs quantum dot with different interlayer. We found that asymmetric multiple stacked QD samples with In0.2Ga0.8As + GaAs interlayer can afford a 180nm flat spectral width with strong PL intensity compared to other samples at room temperature. We think this result is due to the introduction of In0.2Ga0.8As strain-reducing layer. Additionally, for the broad spectral width and the strong PL intensity, this structure can be a promising candidate for quantum-dot superluminescent diodes.
关键词	Spectrum
学科领域	半导体器件
主办者	Mat Res Soc.; Evident Technol Inc.; IBM TJ Watson Res Ctr.; Los Alamos Natl Lab.; Motorola Inc.; Texas A&M Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13619
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang ZY Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Zhang ZY,Li CM,Jin P,et al. Influence of In0.2Ga0.8As strain-reducing layer on the active region of quantum dot superluminescent diodes[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,2003:119-127.

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