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题名: Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
作者: Zhang SB;  Xu YY;  Hu ZH;  Wang YQ;  Zeng XB;  Diao HW;  Wang WJ;  Kong GL;  Liao XB
出版日期: 2002
会议日期: MAY 19-24, 2002
摘要: Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).
会议名称: 29th IEEE Photovoltaic Specialists Conference
KOS主题词: Silicon;  Raman
会议文集: CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB .Characterization of diphasic nc-Si/a-Si : H thin films and solar cells .见:IEEE .CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002,345 E 47TH ST, NEW YORK, NY 10017 USA ,2002,1182-1185
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