Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

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	Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
	Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB; Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
	2002
Conference Name	29th IEEE Photovoltaic Specialists Conference
Source Publication	CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002
Pages	1182-1185
Conference Date	MAY 19-24, 2002
Conference Place	NEW ORLEANS, LA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	0-7803-7471-1
metadata_83	chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
Abstract	Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).
Keyword	Silicon Raman
Subject Area	半导体材料
Funding Organization	IEEE Electron Devices Soc.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13617
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Zhang SB,Xu YY,Hu ZH,et al. Characterization of diphasic nc-Si/a-Si : H thin films and solar cells[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:1182-1185.

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