SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
Zhang SB; Xu YY; Hu ZH; Wang YQ; Zeng XB; Diao HW; Wang WJ; Kong GL; Liao XB; Zhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
2002
Conference Name29th IEEE Photovoltaic Specialists Conference
Source PublicationCONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002
Pages1182-1185
Conference DateMAY 19-24, 2002
Conference PlaceNEW ORLEANS, LA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN0-7803-7471-1
metadata_83chinese acad sci, inst semicond, state lab surface phys, beijing 100083, peoples r china
AbstractHydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).
KeywordSilicon Raman
Subject Area半导体材料
Funding OrganizationIEEE Electron Devices Soc.
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/13617
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorZhang SB Chinese Acad Sci Inst Semicond State Lab Surface Phys Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Zhang SB,Xu YY,Hu ZH,et al. Characterization of diphasic nc-Si/a-Si : H thin films and solar cells[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:1182-1185.
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