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题名: Characterization of polymorphous silicon thin film and solar cells
作者: Zhang S;  Xu Y;  Liao X;  Martins R;  Fortunato E;  Hu Z;  Kong G
出版日期: 2004
会议日期: APR 14-16, 2003
摘要: Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).
会议名称: 2nd International Materials Symposium
KOS主题词: solar cell
会议文集: ADVANCED MATERIALS FORUM II, 455-456
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhang S; Xu Y; Liao X; Martins R; Fortunato E; Hu Z; Kong G .Characterization of polymorphous silicon thin film and solar cells .见:TRANS TECH PUBLICATIONS LTD .ADVANCED MATERIALS FORUM II, 455-456,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2004,77-80
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