Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
	Ye XL; Chen YH; Xu B; Zeng YP; Wang ZG; Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
	2004
会议名称	10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10)
会议录名称	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3)
页码	297-300
会议日期	SEP 29-OCT 02, 2003
会议地点	Batz sur Mer, FRANCE
出版地	17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE
出版者	E D P SCIENCES
ISSN	1286-0042
部门归属	chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china
摘要	The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS). The RDS line shapes are found to be similar in all the samples examined here, which dominantly consist of two peak-like signals corresponding to 1HH-->1E and 1LH-->1E transition. As the well width is decreased, or the 1 ML InAs layer is inserted at one interface, the intensity of the anisotropy increases quickly. Our detail analysis shows that the anisotropy mainly arises from the anisotropic interface roughness. The results demonstrate that the RDS technique is sensitive to the interface structures.
关键词	Short-period Superlattices Raman-scattering Quantum-wells Growth Roughness Segregation Alas/gaas Alas Gaas
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13589
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ye XL Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn
推荐引用方式 GB/T 7714	Ye XL,Chen YH,Xu B,et al. Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy[C]. 17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE:E D P SCIENCES,2004:297-300.

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