MOCVD GaAlAs/GaAs超晶格量子阱材料的研制及应用

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

Subject Area	半导体材料
	MOCVD GaAlAs/GaAs超晶格量子阱材料的研制及应用
	杨辉; 梁骏吾; 邓礼生; 郑联喜; 胡雄伟
Subtype	院科技进步奖
Award Level	二等奖
	1994
Keyword	Mocvd
Language	中文
Document Type	成果
Identifier	http://ir.semi.ac.cn/handle/172111/11056
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	杨辉,梁骏吾,邓礼生,等. MOCVD GaAlAs/GaAs超晶格量子阱材料的研制及应用. 1994.

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