SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Subject Area半导体材料
MOCVD GaAlAs/GaAs超晶格量子阱材料的研制及应用
杨辉; 梁骏吾; 邓礼生; 郑联喜; 胡雄伟
Subtype院科技进步奖
Award Level二等奖
1994
KeywordMocvd
Language中文
Document Type成果
Identifierhttp://ir.semi.ac.cn/handle/172111/11056
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨辉,梁骏吾,邓礼生,等. MOCVD GaAlAs/GaAs超晶格量子阱材料的研制及应用. 1994.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
[邓礼生]'s Articles
Baidu academic
Similar articles in Baidu academic
[杨辉]'s Articles
[梁骏吾]'s Articles
[邓礼生]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[杨辉]'s Articles
[梁骏吾]'s Articles
[邓礼生]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.