SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Circuit design and simulation of a CMOS-based preamplifier for brain neural signals
Sui XH; Pei WH; Gu M; Liu JB; Chen HD; Sui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
2005
Conference Name1st International Conference on Neural Interface and Control (CNIC)
Source Publication2005 First International Conference on Neural Interface and Control Proceedings
Pages108-110
Conference DateMAY 26-28, 2005
Conference PlaceWuhan, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN0-7803-8902-6
metadata_83chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
AbstractA novel CMOS-based preamplifier for amplifying brain neural signal obtained by scalp electrodes in brain-computer interface (BCI) is presented in this paper. By means of constructing effective equivalent input circuit structure of the preamplifier, two capacitors of 5 pF are included to realize the DC suppression compared to conventional preamplifiers. Then this preamplifier is designed and simulated using the standard 0.6 mu m MOS process technology model parameters with a supply voltage of 5 volts. With differential input structures adopted, simulation results of the preamplifier show that the input impedance amounts to more than 2 Gohm with brain neural signal frequency of 0.5 Hz-100 Hz. The equivalent input noise voltage is 18 nV/Hz(1/2). The common mode rejection ratio (CMRR) of 112 dB and the open-loop differential gain of 90 dB are achieved.
KeywordBci
Subject Area光电子学
Funding OrganizationHuazhong Univ Sci & Technol.; Arizona State Univ.; Tsinghua Univ.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10124
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorSui, XH, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Sui XH,Pei WH,Gu M,et al. Circuit design and simulation of a CMOS-based preamplifier for brain neural signals[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:108-110.
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