A silicon capacitive microphone based on oxidized porous silicon sacrificial technology
Ning, J; Liu, ZL; Liu, HZ; Ge, YC; Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
2004
会议名称7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码VOLS 1- 3 PROCEEDINGS: 1872-1875
会议日期OCT 18-21, 2004
会议地点Beijing, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN0-7803-8511-X
部门归属chinese acad sci, microelect r&d ctr, inst semicond, beijing 100083, peoples r china
摘要In this paper, a new capacitive microphone fabrication technology is proposed. It describes using the oxidized porous silicon sacrificial technology to make air gap and using KOH etching technique to make the backplate containing acoustic holes based on the principle that the heavy p(+)-doping silicon can be nearly etched in KOH solution. The innovation of the method is using oxidized porous silicon technology. The sensitivity of the fabricated microphone is from -55dB ( 1.78mV/Pa) to -45dB (5.6mV/Pa) in the frequency range of 500Hz to 25kHz. Its cut-off frequency is higher than 20kHz.
关键词Silicon Capacitive Microphone Oxidized Porous Silicon Sacrificial Layer
学科领域微电子学
主办者Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/10096
专题中国科学院半导体研究所(2009年前)
通讯作者Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式
GB/T 7714
Ning, J,Liu, ZL,Liu, HZ,et al. A silicon capacitive microphone based on oxidized porous silicon sacrificial technology[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 1872-1875.
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