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题名: Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides
作者: Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL
出版日期: 2004
会议日期: OCT 18-21, 2004
摘要: Charge trapping in the fluorinated SIMOX buried oxides before and after ionizing radiation has been investigated by means of C-V characteristics. Radiation-induced positive charge trapping which results in negative shift of C-V curves can be restrained by implanting fluorine ions into the SIMOX buried oxides. Pre-radiation charge trapping is suppressed in the fluorinated buried oxides. The fluorine dose and post-implantation anneal time play a very important role in the control of charge trapping.
会议名称: 7th International Conference on Solid-State and Integrated Circuits Technology
KOS主题词: Fluorine;  Lithography, Electron beam;  Radiation
会议文集: 2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL .Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides .见:IEEE .2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,VOLS 1- 3 PROCEEDINGS: 847-850
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