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题名: Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET
作者: Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K
出版日期: 2004
会议日期: OCT 18-21, 2004
摘要: The mobility of channel electron, for partially depleted Sol nMOSFET in this paper, decreases with the increase of implanted fluorine dose in buried oxide layer. But, the experimental results also show that it is larger for the transistor corresponding to the lowest implantation dose than no implanted fluorine in buried layer. It is explained in tern-is of a "lubricant" model. Mien fluorine atoms are implanted in the top silicon layer, the mobility is the largest. In addition, a positive shift of threshold voltage has also been observed for the transistors fabricated on the Sol wafers processed by the implantation of fluorine. The causes of all the above results are discussed.
会议名称: 7th International Conference on Solid-State and Integrated Circuits Technology
会议文集: 2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K .Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET .见:IEEE .2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY,345 E 47TH ST, NEW YORK, NY 10017 USA ,2004,VOLS 1- 3 PROCEEDINGS: 277-278
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