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题名: 1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector
作者: Li CB;  Cheng BW;  Mao RW;  Zuo YH;  Yu JZ;  Wang QM
出版日期: 2005
会议日期: NOV 08-11, 2004
摘要: The high quality Ge islands material with 1.55 mu m photo-response grown on Sol substrate is reported. Due to the modulation of the cavity formed by the mirrors at the surface and the buried SiO2 interface, seven sharp and strong peaks with narrow linewidth are found. And a 1.55 mu m Ge islands resonant-cavity-enhanced (RCE) detector with narrowband was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching, in a basic solution from the backside of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mu m. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement.
会议名称: Conference on Optoelectronic Devices and Integration
会议文集: OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Li, CB; Cheng, BW; Mao, RW; Zuo, YH; Yu, JZ; Wang, QM .1.55 mu m Ge islands resonant-cavity-enhanced narrowband detector .见:SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC DEVICES AND INTEGRATION丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,PTS 1 AND 2 5644: 465-471 Part 1-2
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