SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser
Xu QY; Chen SW; Xu, QY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2004
Conference Name5th International Conference on Thin Film Physics and Applications
Source PublicationFIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
Pages5774: 519-522
Conference DateMAY 31-JUN 02, 2004
Conference PlaceShanghai, PEOPLES R CHINA
Publication Place1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
PublisherSPIE-INT SOC OPTICAL ENGINEERING
ISSN0277-786X
ISBN0-8194-5755-8
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china
AbstractThe scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.
KeywordFiber Grating
Subject Area光电子学
Funding OrganizationChinese Phys Soc.; Shanghai Phys Soc.; Natl Nat Sci Fdn China.; E China Normal Univ, Sch Informat Sci & Technol.; Fudan Univ, Appl Surface Phys Lab.; Natl Lab Infrared Phys.; CAS, Shanghai Inst Tech Phys.; E China Normal Univ, Key Lab Opt & Magnet Resonance Spectroscopy.
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/10070
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorXu, QY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Xu QY,Chen SW,Xu, QY, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.. Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2004:5774: 519-522.
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