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| Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters | |
| Hou LP; Zhu HL; Zhou F; Wang BJ; Bian J; Wang W; Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: houlp@red.semi.ac.cn | |
| 2006 | |
| Conference Name | 3rd International Conference on Materials for Advanced Technologies/9th International Conference on Advanced Materials |
| Source Publication | JOURNAL OF CRYSTAL GROWTH |
| Pages | 288 (1): 148-152 |
| Conference Date | JUL 03-08, 2005 |
| Conference Place | Singapore, SINGAPORE |
| Publication Place | PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS |
| Publisher | ELSEVIER SCIENCE BV |
| ISSN | 0022-0248 |
| metadata_83 | chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china |
| Abstract | We have demonstrated an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) monolithically integrated with novel dual-waveguide spot-size converters (SSCs) at the input and output ports for low-loss coupling to planar light-guide circuit silica waveguide or cleaved single-mode optical fiber. The device is fabricated by means of selective-area MOVPE growth (SAG), quantum well intermixing (QWI) and asymmetric twin waveguide (ATG) technologies with only three steps low-pressure MOVPE growth. For the device structure, in SOA/EAM section, double ridge structure was employed to reduce the EAM capacitances and enable high bit-rate operation. In the SSC sections, buried ridge stripe (BRS) were incorporated. Such a combination of ridge, ATG and BRS structure is reported for the first time in which it can take advantage of both easy processing of ridge structure and the excellent mode characteristic of BRS. At the wavelength range of 1550-1600 nm, lossless operation with extinction ratios of 25 dB DC and more than 10 GHz 3-dB bandwidth is successfully achieved. The beam divergence angles of the input and output ports of the device are as small as 8.0 degrees x 12.6 degrees, resulting in 3.0 dB coupling loss with cleaved single-mode optical fiber. (c) 2005 Elsevier B.V. All rights reserved. |
| Keyword | Asymmetric Twin Waveguide |
| Subject Area | 光电子学 |
| Funding Organization | Int Union Mat Res Soc.; Mat Res Soc Singapore.; Suntec Int Convent & Exhibit Ctr. |
| Indexed By | 其他 |
| Language | 英语 |
| Document Type | 会议论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/10044 |
| Collection | 中国科学院半导体研究所（2009年前） |
| Corresponding Author | Hou, LP, Chinese Acad Sci, Inst Semicond, Natl Res Ctr Optoelect Technol, Beijing 100083, Peoples R China. 电子邮箱地址: houlp@red.semi.ac.cn |
| Recommended Citation GB/T 7714 | Hou LP,Zhu HL,Zhou F,et al. Electroabsorption modulated semiconductor optical amplifier monolithically integrated with spot-size converters[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:288 (1): 148-152. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2405.pdf（205KB） | 限制开放 | -- | Application Full Text | |||
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