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题名: Growth and characterization of semi-insulating GaN films grown by MOCVD
作者: Fang, CB;  Wang, XL;  Hu, GX;  Wang, JX;  Wang, CM;  Li, JM
出版日期: 2006
会议日期: OCT 16-19, 2005
摘要: High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arc-min, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 degrees C was measured to be approximate 10(9) and 10(6) Omega(.)cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
会议名称: 3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
KOS主题词: atomic layer deposition
会议文集: JOURNAL OF RARE EARTHS
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Fang, CB; Wang, XL; Hu, GX; Wang, JX; Wang, CM; Li, JM .Growth and characterization of semi-insulating GaN films grown by MOCVD .见:METALLURGICAL INDUSTRY PRESS .JOURNAL OF RARE EARTHS,2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA ,MAR 2006,24: 14-18 Sp. Iss. SI
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