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题名: The study of high temperature annealing of a-SiC : H films
作者: Zhang, S;  Hu, Z;  Raniero, L;  Liao, X;  Ferreira, I;  Fortunato, E;  Vilarinho, P;  Perreira, L;  Martins, R
出版日期: 2006
会议日期: MAR 20-23, 2005
摘要: A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 A) gold film was evaporated on the half area of the aSiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 degrees C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.
会议名称: 3rd International Materials Symposium/12th Meeting of the Sociedad-Portuguesa-da-Materials (Materials 2005/SPM)
KOS主题词: Silicon carbide;  Silicon
会议文集: ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM
专题: 中国科学院半导体研究所(2009年前)_会议论文

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Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R .The study of high temperature annealing of a-SiC : H films .见:TRANS TECH PUBLICATIONS LTD .ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM ,BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND ,2006,PTS 1 AND 2 514-516: 18-22 Part 1-2
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